| Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures | |
| Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B | |
| 2014 | |
| Source Publication | SCIENTIFIC REPORTS
 |
| Volume | 4Pages:6521 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-20 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26115 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Wang, JM,Xu, FJ,Zhang, X,et al. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures[J]. SCIENTIFIC REPORTS,2014,4:6521. |
| APA | Wang, JM.,Xu, FJ.,Zhang, X.,An, W.,Li, XZ.,...&Shen, B.(2014).Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures.SCIENTIFIC REPORTS,4,6521. |
| MLA | Wang, JM,et al."Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures".SCIENTIFIC REPORTS 4(2014):6521. |
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| File Name/Size | DocType | Version | Access | License | ||
| Evidence of Type-II （738KB） | 限制开放 | License | Application Full Text | |||
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