SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells
Wang Wei-Ying; Liu Gui-Peng; Jin Peng; Mao De-Feng; Li Wei; Wang Zhan-Guo; Tian Wu; Chen Chang-Qing
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:11Pages:117803
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26095
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang Wei-Ying,Liu Gui-Peng,Jin Peng,et al. Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells[J]. CHINESE PHYSICS B,2014,23(11):117803.
APA Wang Wei-Ying.,Liu Gui-Peng.,Jin Peng.,Mao De-Feng.,Li Wei.,...&Chen Chang-Qing.(2014).Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells.CHINESE PHYSICS B,23(11),117803.
MLA Wang Wei-Ying,et al."Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells".CHINESE PHYSICS B 23.11(2014):117803.
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