| Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells | |
| Wang Wei-Ying; Liu Gui-Peng; Jin Peng; Mao De-Feng; Li Wei; Wang Zhan-Guo; Tian Wu; Chen Chang-Qing | |
| 2014 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 23Issue:11Pages:117803 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-20 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26095 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Wang Wei-Ying,Liu Gui-Peng,Jin Peng,et al. Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells[J]. CHINESE PHYSICS B,2014,23(11):117803. |
| APA | Wang Wei-Ying.,Liu Gui-Peng.,Jin Peng.,Mao De-Feng.,Li Wei.,...&Chen Chang-Qing.(2014).Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells.CHINESE PHYSICS B,23(11),117803. |
| MLA | Wang Wei-Ying,et al."Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells".CHINESE PHYSICS B 23.11(2014):117803. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effects of interface（271KB） | 限制开放 | License | Application Full Text | |||
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