| Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions | |
| Shi Li-Yang; Shen Bo; Yan Jian-Chang; Wang Jun-Xi; Wang Ping | |
| 2014 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 23Issue:11Pages:116102 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-20 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26094 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Shi Li-Yang,Shen Bo,Yan Jian-Chang,et al. Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions[J]. CHINESE PHYSICS B,2014,23(11):116102. |
| APA | Shi Li-Yang,Shen Bo,Yan Jian-Chang,Wang Jun-Xi,&Wang Ping.(2014).Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions.CHINESE PHYSICS B,23(11),116102. |
| MLA | Shi Li-Yang,et al."Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions".CHINESE PHYSICS B 23.11(2014):116102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Localized deep level（491KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment