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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
He Chao; Liu Zhi; Zhang Xu; Huang Wen-Qi; Xue Chun-Lai; Cheng Bu-Wen
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:11Pages:116103
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26093
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
He Chao,Liu Zhi,Zhang Xu,et al. Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature[J]. CHINESE PHYSICS B,2014,23(11):116103.
APA He Chao,Liu Zhi,Zhang Xu,Huang Wen-Qi,Xue Chun-Lai,&Cheng Bu-Wen.(2014).Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature.CHINESE PHYSICS B,23(11),116103.
MLA He Chao,et al."Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature".CHINESE PHYSICS B 23.11(2014):116103.
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