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Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres
Yang, JK; Wei, TB; Huo, ZQ; Hu, Q; Zhang, YH; Duan, RF; Wang, JX
2014
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume387Pages:101-105
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26064
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yang, JK,Wei, TB,Huo, ZQ,et al. Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres[J]. JOURNAL OF CRYSTAL GROWTH,2014,387:101-105.
APA Yang, JK.,Wei, TB.,Huo, ZQ.,Hu, Q.,Zhang, YH.,...&Wang, JX.(2014).Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres.JOURNAL OF CRYSTAL GROWTH,387,101-105.
MLA Yang, JK,et al."Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres".JOURNAL OF CRYSTAL GROWTH 387(2014):101-105.
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