Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer | |
Wang, JX; Wang, LS; Yang, SY; Li, HJ; Zhao, GJ; Zhang, H; Wei, HY; Jiao, CM; Zhu, QS; Wang, ZG | |
2014 | |
Source Publication | CHINESE PHYSICS B
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Volume | 23Issue:2Pages:026801 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-20 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26053 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Wang, JX,Wang, LS,Yang, SY,et al. Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer[J]. CHINESE PHYSICS B,2014,23(2):026801. |
APA | Wang, JX.,Wang, LS.,Yang, SY.,Li, HJ.,Zhao, GJ.,...&Wang, ZG.(2014).Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer.CHINESE PHYSICS B,23(2),026801. |
MLA | Wang, JX,et al."Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer".CHINESE PHYSICS B 23.2(2014):026801. |
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Effects of VIII rati(691KB) | 限制开放 | License | Application Full Text |
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