| Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer | |
| Wang, JX; Wang, LS; Yang, SY; Li, HJ; Zhao, GJ; Zhang, H; Wei, HY; Jiao, CM; Zhu, QS; Wang, ZG | |
| 2014 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 23Issue:2Pages:026801 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-20 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26053 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Wang, JX,Wang, LS,Yang, SY,et al. Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer[J]. CHINESE PHYSICS B,2014,23(2):026801. |
| APA | Wang, JX.,Wang, LS.,Yang, SY.,Li, HJ.,Zhao, GJ.,...&Wang, ZG.(2014).Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer.CHINESE PHYSICS B,23(2),026801. |
| MLA | Wang, JX,et al."Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer".CHINESE PHYSICS B 23.2(2014):026801. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effects of VIII rati（691KB） | 限制开放 | License | Application Full Text | |||
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