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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes
Li, XJ; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Wu, LL; Li, L; Le, LC; Yang, J; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:2Pages:028503
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26052
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Li, XJ,Zhao, DG,Jiang, DS,et al. Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes[J]. CHINESE PHYSICS B,2014,23(2):028503.
APA Li, XJ.,Zhao, DG.,Jiang, DS.,Liu, ZS.,Chen, P.,...&Yang, H.(2014).Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes.CHINESE PHYSICS B,23(2),028503.
MLA Li, XJ,et al."Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes".CHINESE PHYSICS B 23.2(2014):028503.
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