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Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography
Zhang, Yonghui; Wei, Tongbo; Xiong, Zhuo; Chen, Yu; Zhen, Aigong; Shan, Liang; Zhao, Yun; Hu, Qiang; Li, Jinmin; Wang, Junxi
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume116Issue:19Pages:194301
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26048
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhang, Yonghui,Wei, Tongbo,Xiong, Zhuo,et al. Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography[J]. JOURNAL OF APPLIED PHYSICS,2014,116(19):194301.
APA Zhang, Yonghui.,Wei, Tongbo.,Xiong, Zhuo.,Chen, Yu.,Zhen, Aigong.,...&Wang, Junxi.(2014).Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography.JOURNAL OF APPLIED PHYSICS,116(19),194301.
MLA Zhang, Yonghui,et al."Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography".JOURNAL OF APPLIED PHYSICS 116.19(2014):194301.
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