The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing | |
Zhang, YH; Wei, TB; Wang, JX; Lan, D; Chen, Y; Hu, Q; Lu, HX; Li, JM | |
2014 | |
Source Publication | AIP ADVANCES
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Volume | 4Issue:2Pages:027123 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-20 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26047 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP ADVANCES,2014,4(2):027123. |
APA | Zhang, YH.,Wei, TB.,Wang, JX.,Lan, D.,Chen, Y.,...&Li, JM.(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP ADVANCES,4(2),027123. |
MLA | Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP ADVANCES 4.2(2014):027123. |
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