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The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
Zhang, YH; Wei, TB; Wang, JX; Lan, D; Chen, Y; Hu, Q; Lu, HX; Li, JM
2014
Source PublicationAIP ADVANCES
Volume4Issue:2Pages:027123
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26047
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP ADVANCES,2014,4(2):027123.
APA Zhang, YH.,Wei, TB.,Wang, JX.,Lan, D.,Chen, Y.,...&Li, JM.(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP ADVANCES,4(2),027123.
MLA Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP ADVANCES 4.2(2014):027123.
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