| The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing | |
| Zhang, YH; Wei, TB; Wang, JX; Lan, D; Chen, Y; Hu, Q; Lu, HX; Li, JM | |
| 2014 | |
| Source Publication | AIP ADVANCES
 |
| Volume | 4Issue:2Pages:027123 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-20 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26047 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP ADVANCES,2014,4(2):027123. |
| APA | Zhang, YH.,Wei, TB.,Wang, JX.,Lan, D.,Chen, Y.,...&Li, JM.(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP ADVANCES,4(2),027123. |
| MLA | Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP ADVANCES 4.2(2014):027123. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The improvement of G（1343KB） | 限制开放 | License | Application Full Text | |||
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