SEMI OpenIR  > 半导体超晶格国家重点实验室
Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors
Huo, Nengjie; Kang, Jun; Wei, Zhongming; Li, Shu-Shen; Li, Jingbo; Wei, Su-Huai
2014
Source PublicationADVANCED FUNCTIONAL MATERIALS
Volume24Issue:44Pages:7025-7031
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26037
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Huo, Nengjie,Kang, Jun,Wei, Zhongming,et al. Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2014,24(44):7025-7031.
APA Huo, Nengjie,Kang, Jun,Wei, Zhongming,Li, Shu-Shen,Li, Jingbo,&Wei, Su-Huai.(2014).Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors.ADVANCED FUNCTIONAL MATERIALS,24(44),7025-7031.
MLA Huo, Nengjie,et al."Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors".ADVANCED FUNCTIONAL MATERIALS 24.44(2014):7025-7031.
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