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Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors | |
Huo, Nengjie; Kang, Jun; Wei, Zhongming; Li, Shu-Shen; Li, Jingbo; Wei, Su-Huai | |
2014 | |
Source Publication | ADVANCED FUNCTIONAL MATERIALS
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Volume | 24Issue:44Pages:7025-7031 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-20 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26037 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Huo, Nengjie,Kang, Jun,Wei, Zhongming,et al. Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2014,24(44):7025-7031. |
APA | Huo, Nengjie,Kang, Jun,Wei, Zhongming,Li, Shu-Shen,Li, Jingbo,&Wei, Su-Huai.(2014).Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors.ADVANCED FUNCTIONAL MATERIALS,24(44),7025-7031. |
MLA | Huo, Nengjie,et al."Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors".ADVANCED FUNCTIONAL MATERIALS 24.44(2014):7025-7031. |
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File Name/Size | DocType | Version | Access | License | ||
Novel and Enhanced O(1439KB) | 限制开放 | License | Application Full Text |
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