Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

	Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors
	Huo, Nengjie; Kang, Jun; Wei, Zhongming; Li, Shu-Shen; Li, Jingbo; Wei, Su-Huai
	2014
Source Publication	ADVANCED FUNCTIONAL MATERIALS
Volume	24 Issue:44 Pages:7025-7031
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2015-03-20
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/26037
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Huo, Nengjie,Kang, Jun,Wei, Zhongming,et al. Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2014,24(44):7025-7031.
APA	Huo, Nengjie,Kang, Jun,Wei, Zhongming,Li, Shu-Shen,Li, Jingbo,&Wei, Su-Huai.(2014).Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors.ADVANCED FUNCTIONAL MATERIALS,24(44),7025-7031.
MLA	Huo, Nengjie,et al."Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors".ADVANCED FUNCTIONAL MATERIALS 24.44(2014):7025-7031.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库