SEMI OpenIR  > 半导体超晶格国家重点实验室
Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field
Li, Yan; Yang, Shengxue; Li, Jingbo
2014
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
Volume118Issue:41Pages:23970-23976
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26032
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li, Yan,Yang, Shengxue,Li, Jingbo. Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2014,118(41):23970-23976.
APA Li, Yan,Yang, Shengxue,&Li, Jingbo.(2014).Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field.JOURNAL OF PHYSICAL CHEMISTRY C,118(41),23970-23976.
MLA Li, Yan,et al."Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field".JOURNAL OF PHYSICAL CHEMISTRY C 118.41(2014):23970-23976.
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