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Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer
Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao; Liu, Lei; Tian, Li-Xin; Zhang, Feng
2014
Source PublicationOPTICS EXPRESS
Volume22Issue:21Pages:A1596-A1603
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26031
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yu, Zhi-Guo,Zhao, Li-Xia,Wei, Xue-Cheng,et al. Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer[J]. OPTICS EXPRESS,2014,22(21):A1596-A1603.
APA Yu, Zhi-Guo.,Zhao, Li-Xia.,Wei, Xue-Cheng.,Lu, Hong-Xi.,Wang, Jun-Xi.,...&Zhang, Feng.(2014).Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.OPTICS EXPRESS,22(21),A1596-A1603.
MLA Yu, Zhi-Guo,et al."Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer".OPTICS EXPRESS 22.21(2014):A1596-A1603.
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