| High Power 1060 nm Distributed Feedback Semiconductor Laser | |
| Zhai, T; Tan, SY; Lu, D; Wang, W; Zhang, RK; Ji, C | |
| 2014 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| Volume | 31Issue:2Pages:024203 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-19 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26023 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zhai, T,Tan, SY,Lu, D,et al. High Power 1060 nm Distributed Feedback Semiconductor Laser[J]. CHINESE PHYSICS LETTERS,2014,31(2):024203. |
| APA | Zhai, T,Tan, SY,Lu, D,Wang, W,Zhang, RK,&Ji, C.(2014).High Power 1060 nm Distributed Feedback Semiconductor Laser.CHINESE PHYSICS LETTERS,31(2),024203. |
| MLA | Zhai, T,et al."High Power 1060 nm Distributed Feedback Semiconductor Laser".CHINESE PHYSICS LETTERS 31.2(2014):024203. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| High Power 1060 nm D（557KB） | 限制开放 | License | Application Full Text | |||
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