High Power 1060 nm Distributed Feedback Semiconductor Laser | |
Zhai, T; Tan, SY; Lu, D; Wang, W; Zhang, RK; Ji, C | |
2014 | |
Source Publication | CHINESE PHYSICS LETTERS
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Volume | 31Issue:2Pages:024203 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26023 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Zhai, T,Tan, SY,Lu, D,et al. High Power 1060 nm Distributed Feedback Semiconductor Laser[J]. CHINESE PHYSICS LETTERS,2014,31(2):024203. |
APA | Zhai, T,Tan, SY,Lu, D,Wang, W,Zhang, RK,&Ji, C.(2014).High Power 1060 nm Distributed Feedback Semiconductor Laser.CHINESE PHYSICS LETTERS,31(2),024203. |
MLA | Zhai, T,et al."High Power 1060 nm Distributed Feedback Semiconductor Laser".CHINESE PHYSICS LETTERS 31.2(2014):024203. |
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File Name/Size | DocType | Version | Access | License | ||
High Power 1060 nm D(557KB) | 限制开放 | License | Application Full Text |
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