| Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes | |
| Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping | |
| 2014 | |
| Source Publication | JOURNAL OF LUMINESCENCE
 |
| Volume | 155Pages:238-243 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-19 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26016 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Yang, Yujue,Ma, Ping,Wei, Xuecheng,et al. Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes[J]. JOURNAL OF LUMINESCENCE,2014,155:238-243. |
| APA | Yang, Yujue,Ma, Ping,Wei, Xuecheng,Yan, Dan,Wang, Yafang,&Zeng, Yiping.(2014).Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes.JOURNAL OF LUMINESCENCE,155,238-243. |
| MLA | Yang, Yujue,et al."Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes".JOURNAL OF LUMINESCENCE 155(2014):238-243. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Design strategies fo（1281KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment