Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes | |
Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping | |
2014 | |
Source Publication | JOURNAL OF LUMINESCENCE
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Volume | 155Pages:238-243 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26016 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Yang, Yujue,Ma, Ping,Wei, Xuecheng,et al. Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes[J]. JOURNAL OF LUMINESCENCE,2014,155:238-243. |
APA | Yang, Yujue,Ma, Ping,Wei, Xuecheng,Yan, Dan,Wang, Yafang,&Zeng, Yiping.(2014).Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes.JOURNAL OF LUMINESCENCE,155,238-243. |
MLA | Yang, Yujue,et al."Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes".JOURNAL OF LUMINESCENCE 155(2014):238-243. |
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