SEMI OpenIR  > 半导体超晶格国家重点实验室
Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy
Wang, J; Xing, JL; Xiang, W; Wang, GW; Xu, YQ; Ren, ZW; Niu, ZC
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume104Issue:5Pages:052111
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26013
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wang, J,Xing, JL,Xiang, W,et al. Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2014,104(5):052111.
APA Wang, J.,Xing, JL.,Xiang, W.,Wang, GW.,Xu, YQ.,...&Niu, ZC.(2014).Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy.APPLIED PHYSICS LETTERS,104(5),052111.
MLA Wang, J,et al."Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy".APPLIED PHYSICS LETTERS 104.5(2014):052111.
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