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Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate
Liu, Yan; Yan, Jing; Liu, Mingshan; Wang, Hongjuan; Zhang, Qingfang; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan
2014
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume29Issue:11Pages:115027
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26012
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Liu, Yan,Yan, Jing,Liu, Mingshan,et al. Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2014,29(11):115027.
APA Liu, Yan.,Yan, Jing.,Liu, Mingshan.,Wang, Hongjuan.,Zhang, Qingfang.,...&Han, Genquan.(2014).Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,29(11),115027.
MLA Liu, Yan,et al."Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 29.11(2014):115027.
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