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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates
Wei, Tongbo; Zhang, Lian; Ji, Xiaoli; Wang, Junxi; Huo, Ziqiang; Sun, Baojun; Hu, Qiang; Wei, Xuecheng; Duan, Ruifei; Zhao, Lixia; Zeng, Yiping; Li, Jinmin
2014
Source PublicationIEEE PHOTONICS JOURNAL
Volume6Issue:6Pages:8200610
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26008
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wei, Tongbo,Zhang, Lian,Ji, Xiaoli,et al. Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates[J]. IEEE PHOTONICS JOURNAL,2014,6(6):8200610.
APA Wei, Tongbo.,Zhang, Lian.,Ji, Xiaoli.,Wang, Junxi.,Huo, Ziqiang.,...&Li, Jinmin.(2014).Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates.IEEE PHOTONICS JOURNAL,6(6),8200610.
MLA Wei, Tongbo,et al."Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates".IEEE PHOTONICS JOURNAL 6.6(2014):8200610.
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