SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer
Zhou Xu-Liang; Pan Jiao-Qing; Yu Hong-Yan; Li Shi-Yan; Wang Bao-Jun; Bian Jing; Wang Wei
2014
Source PublicationCHINESE PHYSICS LETTERS
Volume31Issue:12Pages:128101
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25998
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhou Xu-Liang,Pan Jiao-Qing,Yu Hong-Yan,et al. Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer[J]. CHINESE PHYSICS LETTERS,2014,31(12):128101.
APA Zhou Xu-Liang.,Pan Jiao-Qing.,Yu Hong-Yan.,Li Shi-Yan.,Wang Bao-Jun.,...&Wang Wei.(2014).Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer.CHINESE PHYSICS LETTERS,31(12),128101.
MLA Zhou Xu-Liang,et al."Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer".CHINESE PHYSICS LETTERS 31.12(2014):128101.
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