SEMI OpenIR  > 半导体超晶格国家重点实验室
Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics
Wang, Xiaozhou; Yang, Shengxue; Yue, Qu; Wu, Fengmin; Li, Jingbo
2014
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume615Pages:989-993
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25994
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wang, Xiaozhou,Yang, Shengxue,Yue, Qu,et al. Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2014,615:989-993.
APA Wang, Xiaozhou,Yang, Shengxue,Yue, Qu,Wu, Fengmin,&Li, Jingbo.(2014).Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics.JOURNAL OF ALLOYS AND COMPOUNDS,615,989-993.
MLA Wang, Xiaozhou,et al."Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics".JOURNAL OF ALLOYS AND COMPOUNDS 615(2014):989-993.
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