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Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature
Shang, ZJ; Zheng, XH; Yang, C; Chen, Y; Li, B; Sun, L; Tang, Z; Zhao, DG
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume105Issue:23Pages:232104
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25993
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Shang, ZJ,Zheng, XH,Yang, C,et al. Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature[J]. APPLIED PHYSICS LETTERS,2014,105(23):232104.
APA Shang, ZJ.,Zheng, XH.,Yang, C.,Chen, Y.,Li, B.,...&Zhao, DG.(2014).Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature.APPLIED PHYSICS LETTERS,105(23),232104.
MLA Shang, ZJ,et al."Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature".APPLIED PHYSICS LETTERS 105.23(2014):232104.
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