High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure | |
Liu, Lei; Qu, Hongwei; Liu, Yun; Zhang, Yejin; Wang, Yufei; Qi, Aiyi; Zheng, Wanhua | |
2014 | |
Source Publication | APPLIED PHYSICS LETTERS
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Volume | 105Issue:23Pages:231110 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/25992 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Liu, Lei,Qu, Hongwei,Liu, Yun,et al. High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure[J]. APPLIED PHYSICS LETTERS,2014,105(23):231110. |
APA | Liu, Lei.,Qu, Hongwei.,Liu, Yun.,Zhang, Yejin.,Wang, Yufei.,...&Zheng, Wanhua.(2014).High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure.APPLIED PHYSICS LETTERS,105(23),231110. |
MLA | Liu, Lei,et al."High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure".APPLIED PHYSICS LETTERS 105.23(2014):231110. |
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File Name/Size | DocType | Version | Access | License | ||
High-power narrow-ve(1000KB) | 限制开放 | License | Application Full Text |
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