Knowledge Management System Of Institute of Semiconductors,CAS
| Tunable band gaps in graphene/GaN van der Waals heterostructures | |
| Huang, L; Yue, Q; Kang, J; Li, Y; Li, JB | |
| 2014 | |
| Source Publication | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| Volume | 26Issue:29Pages:295304 |
| Subject Area | 半导体物理 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-19 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25986 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | Huang, L,Yue, Q,Kang, J,et al. Tunable band gaps in graphene/GaN van der Waals heterostructures[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2014,26(29):295304. |
| APA | Huang, L,Yue, Q,Kang, J,Li, Y,&Li, JB.(2014).Tunable band gaps in graphene/GaN van der Waals heterostructures.JOURNAL OF PHYSICS-CONDENSED MATTER,26(29),295304. |
| MLA | Huang, L,et al."Tunable band gaps in graphene/GaN van der Waals heterostructures".JOURNAL OF PHYSICS-CONDENSED MATTER 26.29(2014):295304. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Tunable band gaps in（1082KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment