SEMI OpenIR  > 半导体超晶格国家重点实验室
Tunable band gaps in graphene/GaN van der Waals heterostructures
Huang, L; Yue, Q; Kang, J; Li, Y; Li, JB
2014
Source PublicationJOURNAL OF PHYSICS-CONDENSED MATTER
Volume26Issue:29Pages:295304
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25986
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Huang, L,Yue, Q,Kang, J,et al. Tunable band gaps in graphene/GaN van der Waals heterostructures[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2014,26(29):295304.
APA Huang, L,Yue, Q,Kang, J,Li, Y,&Li, JB.(2014).Tunable band gaps in graphene/GaN van der Waals heterostructures.JOURNAL OF PHYSICS-CONDENSED MATTER,26(29),295304.
MLA Huang, L,et al."Tunable band gaps in graphene/GaN van der Waals heterostructures".JOURNAL OF PHYSICS-CONDENSED MATTER 26.29(2014):295304.
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