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Tunable band gaps in graphene/GaN van der Waals heterostructures | |
Huang, L; Yue, Q; Kang, J; Li, Y; Li, JB | |
2014 | |
Source Publication | JOURNAL OF PHYSICS-CONDENSED MATTER
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Volume | 26Issue:29Pages:295304 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/25986 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Huang, L,Yue, Q,Kang, J,et al. Tunable band gaps in graphene/GaN van der Waals heterostructures[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2014,26(29):295304. |
APA | Huang, L,Yue, Q,Kang, J,Li, Y,&Li, JB.(2014).Tunable band gaps in graphene/GaN van der Waals heterostructures.JOURNAL OF PHYSICS-CONDENSED MATTER,26(29),295304. |
MLA | Huang, L,et al."Tunable band gaps in graphene/GaN van der Waals heterostructures".JOURNAL OF PHYSICS-CONDENSED MATTER 26.29(2014):295304. |
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