SEMI OpenIR  > 中科院半导体材料科学重点实验室
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume116Issue:4Pages:044507
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25984
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Luan, CB,Lin, ZJ,Lv, YJ,et al. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors[J]. JOURNAL OF APPLIED PHYSICS,2014,116(4):044507.
APA Luan, CB.,Lin, ZJ.,Lv, YJ.,Zhao, JT.,Wang, YT.,...&Wang, ZG.(2014).Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors.JOURNAL OF APPLIED PHYSICS,116(4),044507.
MLA Luan, CB,et al."Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors".JOURNAL OF APPLIED PHYSICS 116.4(2014):044507.
Files in This Item:
File Name/Size DocType Version Access License
Theoretical model of(1000KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Luan, CB]'s Articles
[Lin, ZJ]'s Articles
[Lv, YJ]'s Articles
Baidu academic
Similar articles in Baidu academic
[Luan, CB]'s Articles
[Lin, ZJ]'s Articles
[Lv, YJ]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Luan, CB]'s Articles
[Lin, ZJ]'s Articles
[Lv, YJ]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.