SEMI OpenIR  > 中科院半导体材料科学重点实验室
Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation
Gao, HS; Liu, Y; Zhang, HY; Wu, SJ; Jiang, CY; Yu, JL; Zhu, LP; Li, Y; Huang, W; Chen, YH
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume104Issue:5Pages:053106
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25982
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Gao, HS,Liu, Y,Zhang, HY,et al. Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation[J]. APPLIED PHYSICS LETTERS,2014,104(5):053106.
APA Gao, HS.,Liu, Y.,Zhang, HY.,Wu, SJ.,Jiang, CY.,...&Chen, YH.(2014).Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation.APPLIED PHYSICS LETTERS,104(5),053106.
MLA Gao, HS,et al."Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation".APPLIED PHYSICS LETTERS 104.5(2014):053106.
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