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Growth of high quality GaN nanowires by using Ga/GaCl3 sources
Ren, MK; Huang, H; Wu, HB; Zhao, DN; Zhu, HC; Liu, Y; Sun, BJ
2014
Source PublicationPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume57Pages:145-148
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25957
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Ren, MK,Huang, H,Wu, HB,et al. Growth of high quality GaN nanowires by using Ga/GaCl3 sources[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2014,57:145-148.
APA Ren, MK.,Huang, H.,Wu, HB.,Zhao, DN.,Zhu, HC.,...&Sun, BJ.(2014).Growth of high quality GaN nanowires by using Ga/GaCl3 sources.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,57,145-148.
MLA Ren, MK,et al."Growth of high quality GaN nanowires by using Ga/GaCl3 sources".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 57(2014):145-148.
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