Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography | |
Qiao, YB; Feng, SW; Xiong, C; Zhu, H | |
2014 | |
Source Publication | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
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Volume | 14Issue:1Pages:413-417 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-16 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/25951 |
Collection | 光电子器件国家工程中心 |
Recommended Citation GB/T 7714 | Qiao, YB,Feng, SW,Xiong, C,et al. Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2014,14(1):413-417. |
APA | Qiao, YB,Feng, SW,Xiong, C,&Zhu, H.(2014).Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,14(1),413-417. |
MLA | Qiao, YB,et al."Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography".IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 14.1(2014):413-417. |
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Working Thermal Stre(471KB) | 限制开放 | License | Application Full Text |
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