| Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography | |
| Qiao, YB; Feng, SW; Xiong, C; Zhu, H | |
| 2014 | |
| Source Publication | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
 |
| Volume | 14Issue:1Pages:413-417 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25951 |
| Collection | 光电子器件国家工程中心 |
| Recommended Citation GB/T 7714 | Qiao, YB,Feng, SW,Xiong, C,et al. Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2014,14(1):413-417. |
| APA | Qiao, YB,Feng, SW,Xiong, C,&Zhu, H.(2014).Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,14(1),413-417. |
| MLA | Qiao, YB,et al."Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography".IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 14.1(2014):413-417. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Working Thermal Stre（471KB） | 限制开放 | License | Application Full Text | |||
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