Finite difference method for analyzing band structure in semiconductor heterostructures without spurious solutions | |
Jiang, Yu; Ma, Xunpeng; Xu, Yun; Song, Guofeng | |
2014 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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Volume | 116Issue:17Pages:173702 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-01 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/25950 |
Collection | 纳米光电子实验室 |
Recommended Citation GB/T 7714 | Jiang, Yu,Ma, Xunpeng,Xu, Yun,et al. Finite difference method for analyzing band structure in semiconductor heterostructures without spurious solutions[J]. JOURNAL OF APPLIED PHYSICS,2014,116(17):173702. |
APA | Jiang, Yu,Ma, Xunpeng,Xu, Yun,&Song, Guofeng.(2014).Finite difference method for analyzing band structure in semiconductor heterostructures without spurious solutions.JOURNAL OF APPLIED PHYSICS,116(17),173702. |
MLA | Jiang, Yu,et al."Finite difference method for analyzing band structure in semiconductor heterostructures without spurious solutions".JOURNAL OF APPLIED PHYSICS 116.17(2014):173702. |
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Finite difference me(1111KB) | 限制开放 | License | Application Full Text |
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