SEMI OpenIR  > 中科院半导体材料科学重点实验室
单片集成钛薄膜热电阻可调谐DFB激光器的制作方法
张灿; 梁松; 朱洪亮
Rights Holder中国科学院半导体研究所
Date Available2013-05-08
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-01-18
Application NumberCN201310019746.2
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25804
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
张灿,梁松,朱洪亮. 单片集成钛薄膜热电阻可调谐DFB激光器的制作方法.
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单片集成钛薄膜热电阻可调谐DFB激光器的(1005KB) 限制开放LicenseApplication Full Text
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