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Z字形自准直半导体光放大器热沉
于丽娟; 刘建国; 祝宁华
Rights Holder中国科学院半导体研究所
Date Available2014-05-07
Country中国
Subtype发明
Subject Area光电子学
Application Date2014-02-10
Application NumberCN201410047192.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25774
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
于丽娟,刘建国,祝宁华. Z字形自准直半导体光放大器热沉.
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Z字形自准直半导体光放大器热沉.pdf(202KB) 限制开放LicenseApplication Full Text
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