| 缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法 | |
| 冯玉霞; 杨少延; 魏鸿源; 焦春美; 孔苏苏 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-06-11 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2014-02-21 |
| Application Number | CN201410058985.3 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25730 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 冯玉霞,杨少延,魏鸿源,等. 缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 缓解MOCVD工艺中硅衬底与氮化镓薄膜间（1519KB） | 限制开放 | License | Application Full Text | |||
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