SEMI OpenIR  > 中科院半导体材料科学重点实验室
缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法
冯玉霞; 杨少延; 魏鸿源; 焦春美; 孔苏苏
Rights Holder中国科学院半导体研究所
Date Available2014-06-11
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-02-21
Application NumberCN201410058985.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25730
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
冯玉霞,杨少延,魏鸿源,等. 缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法.
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