缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法 | |
冯玉霞; 杨少延; 魏鸿源; 焦春美; 孔苏苏 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2014-06-11 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体材料 |
Application Date | 2014-02-21 |
Application Number | CN201410058985.3 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25730 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | 冯玉霞,杨少延,魏鸿源,等. 缓解MOCVD工艺中硅衬底与氮化镓薄膜间应力的方法. |
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File Name/Size | DocType | Version | Access | License | ||
缓解MOCVD工艺中硅衬底与氮化镓薄膜间(1519KB) | 限制开放 | License | Application Full Text |
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