SEMI OpenIR  > 半导体超晶格国家重点实验室
TiO2柱撑MoS2复合纳米材料用于二恶英无害化处理的方法
裴洋; 夏建白; 李京波
Rights Holder中国科学院半导体研究所
Date Available2013-07-23
Country中国
Subtype发明
Subject Area半导体物理
Application Date2013-05-04
Application NumberCN201410183663.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25669
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
裴洋,夏建白,李京波. TiO2柱撑MoS2复合纳米材料用于二恶英无害化处理的方法.
Files in This Item:
File Name/Size DocType Version Access License
TiO_sub_2__sub_柱撑MoS(596KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[裴洋]'s Articles
[夏建白]'s Articles
[李京波]'s Articles
Baidu academic
Similar articles in Baidu academic
[裴洋]'s Articles
[夏建白]'s Articles
[李京波]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[裴洋]'s Articles
[夏建白]'s Articles
[李京波]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.