SEMI OpenIR  > 中科院半导体材料科学重点实验室
一种超饱和掺杂半导体薄膜的制备方法
王科范; 张华荣; 彭成晓; 曲胜春; 王占国
Rights Holder中国科学院半导体研究所
Date Available2013-08-28
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-05-02
Application NumberCN201310157821.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25626
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王科范,张华荣,彭成晓,等. 一种超饱和掺杂半导体薄膜的制备方法.
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