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垂直结构表面等离激元增强GaN基纳米柱LED及制备方法
于治国; 赵丽霞; 魏学成; 王军喜; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-09-25
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-05-22
Application NumberCN201310193970.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25606
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
于治国,赵丽霞,魏学成,等. 垂直结构表面等离激元增强GaN基纳米柱LED及制备方法.
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