SEMI OpenIR  > 中科院半导体照明研发中心
可调控能带的UV LED多量子阱结构装置及生长方法
张连; 曾建平; 魏同波; 闫建昌; 王军喜; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-09-25
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-06-19
Application NumberCN201310244191.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25577
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
张连,曾建平,魏同波,等. 可调控能带的UV LED多量子阱结构装置及生长方法.
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可调控能带的UV+LED多量子阱结构装置(734KB) 限制开放LicenseApplication Full Text
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