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一种获得低稀释率涂层的激光熔覆方法
林学春; 高文焱; 赵树森; 王奕博; 刘发兰; 周春阳
Rights Holder中国科学院半导体研究所
Date Available2013-10-02
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-07-10
Application NumberCN201310288716.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25548
Collection全固态光源实验室
Recommended Citation
GB/T 7714
林学春,高文焱,赵树森,等. 一种获得低稀释率涂层的激光熔覆方法.
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