SEMI OpenIR  > 中科院半导体照明研发中心
任意切割式高压LED器件的制作方法
詹腾; 王国宏; 郭金霞; 李璟; 伊晓燕; 刘志强; 王军喜; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-08-07
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-04-09
Application NumberCN201310121433.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25541
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
詹腾,王国宏,郭金霞,等. 任意切割式高压LED器件的制作方法.
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