SEMI OpenIR  > 半导体集成技术工程研究中心
硅基III-V族纳米线选区横向外延生长的方法
韩伟华; 杨晓光; 杨涛; 王昊; 洪文婷; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2013-10-09
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-06-13
Application NumberCN201310232595.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25539
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
韩伟华,杨晓光,杨涛,等. 硅基III-V族纳米线选区横向外延生长的方法.
Files in This Item:
File Name/Size DocType Version Access License
硅基III-V族纳米线选区横向外延生长的(1132KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[韩伟华]'s Articles
[杨晓光]'s Articles
[杨涛]'s Articles
Baidu academic
Similar articles in Baidu academic
[韩伟华]'s Articles
[杨晓光]'s Articles
[杨涛]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[韩伟华]'s Articles
[杨晓光]'s Articles
[杨涛]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.