| 一种高阻GaN薄膜的制备方法 | |
| 何晓光; 赵德刚; 江德生; 刘宗顺; 陈平; 杨静; 乐伶聪; 李晓静; 杨辉 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-02-12 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 光电子学 |
| Application Date | 2013-11-14 |
| Application Number | CN201310566981.1 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25480 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | 何晓光,赵德刚,江德生,等. 一种高阻GaN薄膜的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 一种高阻GaN薄膜的制备方法.pdf（375KB） | 限制开放 | License | Application Full Text | |||
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