SEMI OpenIR  > 光电子研究发展中心
一种高阻GaN薄膜的制备方法
何晓光; 赵德刚; 江德生; 刘宗顺; 陈平; 杨静; 乐伶聪; 李晓静; 杨辉
Rights Holder中国科学院半导体研究所
Date Available2014-02-12
Country中国
Subtype发明
Subject Area光电子学
Application Date2013-11-14
Application NumberCN201310566981.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25480
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
何晓光,赵德刚,江德生,等. 一种高阻GaN薄膜的制备方法.
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