SEMI OpenIR  > 中科院半导体材料科学重点实验室
ZnO体单晶的Sb离子注入掺杂及退火激活方法
谢辉; 赵有文
Rights Holder中国科学院半导体研究所
Date Available2012-09-26
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-06-08
Application NumberCN201210189488.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25421
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
谢辉,赵有文. ZnO体单晶的Sb离子注入掺杂及退火激活方法.
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