SEMI OpenIR  > 中科院半导体材料科学重点实验室
制备非极性A面GaN薄膜的方法
赵桂娟; 李志伟; 桑玲; 魏鸿源; 刘祥林; 朱勤生; 杨少延; 王占国
Rights Holder中国科学院半导体研究所
Date Available2012-12-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-08-29
Application NumberCN201210313725.7
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25414
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
赵桂娟,李志伟,桑玲,等. 制备非极性A面GaN薄膜的方法.
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制备非极性A面GaN薄膜的方法.pdf(934KB) 限制开放LicenseApplication Full Text
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