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Ⅱ类超晶格窄光谱红外光电探测器材料的外延生长方法
张艳华; 马文全; 曹玉莲
Rights Holder中国科学院半导体研究所
Date Available2012-07-04
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-02-17
Application NumberCN201210037639.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25365
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
张艳华,马文全,曹玉莲. Ⅱ类超晶格窄光谱红外光电探测器材料的外延生长方法.
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