| 基于硅基赝砷化镓衬底的850nm激光器的制备方法 | |
| 周旭亮; 于红艳; 潘教青; 赵玲娟; 王圩 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2012-07-11 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2012-03-06 |
| Application Number | CN201210057292.3 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25341 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 周旭亮,于红艳,潘教青,等. 基于硅基赝砷化镓衬底的850nm激光器的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 基于硅基赝砷化镓衬底的850nm激光器的（394KB） | 限制开放 | License | Application Full Text | |||
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