SEMI OpenIR  > 中科院半导体材料科学重点实验室
基于硅基赝砷化镓衬底的850nm激光器的制备方法
周旭亮; 于红艳; 潘教青; 赵玲娟; 王圩
Rights Holder中国科学院半导体研究所
Date Available2012-07-11
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-03-06
Application NumberCN201210057292.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25341
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
周旭亮,于红艳,潘教青,等. 基于硅基赝砷化镓衬底的850nm激光器的制备方法.
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