SEMI OpenIR  > 中科院半导体材料科学重点实验室
在碳化硅半导体薄膜双注入区形成短沟道的方法
郑柳; 孙国胜; 刘兴昉; 张峰; 王雷; 赵万顺; 闫果果; 董林; 刘胜北; 刘斌; 曾一平
Rights Holder中国科学院半导体研究所
Date Available2012-07-18
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-03-07
Application NumberCN201210057866.7
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25339
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
郑柳,孙国胜,刘兴昉,等. 在碳化硅半导体薄膜双注入区形成短沟道的方法.
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在碳化硅半导体薄膜双注入区形成短沟道的方(390KB) 限制开放LicenseApplication Full Text
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