SEMI OpenIR  > 光电子研究发展中心
用于神经元刺激及电信号记录的光电极阵列及制备方法
裴为华; 陈三元; 归强; 李雷; 陈弘达
Rights Holder中国科学院半导体研究所
Date Available2012-12-19
Country中国
Subtype发明
Subject Area光电子学
Application Date2012-09-24
Application NumberCN201210358686.2
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25333
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
裴为华,陈三元,归强,等. 用于神经元刺激及电信号记录的光电极阵列及制备方法.
Files in This Item:
File Name/Size DocType Version Access License
用于神经元刺激及电信号记录的光电极阵列及(453KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[裴为华]'s Articles
[陈三元]'s Articles
[归强]'s Articles
Baidu academic
Similar articles in Baidu academic
[裴为华]'s Articles
[陈三元]'s Articles
[归强]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[裴为华]'s Articles
[陈三元]'s Articles
[归强]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.