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利用InN纳米棒作为形核层生长单晶GaN纳米管的方法
刘长波; 赵桂娟; 桑玲; 王建霞; 魏鸿源; 焦春美; 刘祥林; 朱勤生; 杨少延; 王占国
Rights Holder中国科学院半导体研究所
Date Available2012-12-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-09-05
Application NumberCN201210325584.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25273
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
刘长波,赵桂娟,桑玲,等. 利用InN纳米棒作为形核层生长单晶GaN纳米管的方法.
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