SEMI OpenIR  > 中科院半导体照明研发中心
阵列式高压LED器件的制作方法
詹腾; 张杨; 李璟; 刘志强; 伊晓燕; 王国宏
Rights Holder中国科学院半导体研究所
Date Available2013-01-09
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-09-13
Application NumberCN201210340102.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25209
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
詹腾,张杨,李璟,等. 阵列式高压LED器件的制作方法.
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