SEMI OpenIR  > 中科院半导体材料科学重点实验室
制备超饱和硫系元素掺杂硅的方法
王科范; 刘孔; 曲胜春; 王占国
Rights Holder中国科学院半导体研究所
Date Available2013-02-20 ; 2013-02-20
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-11-23
Application NumberCN201210484770.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25202
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王科范,刘孔,曲胜春,等. 制备超饱和硫系元素掺杂硅的方法.
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制备超饱和硫系元素掺杂硅的方法.pdf(259KB) 限制开放LicenseApplication Full Text
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