SEMI OpenIR  > 中科院半导体照明研发中心
氮化镓基衬底光子晶体发光二极管制作方法
谢海忠; 卢鹏志; 耿雪妮; 杨华; 李璟; 伊晓燕; 王军喜; 王国宏; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-03-27 ; 2013-03-27
Country中国
Subtype发明
Subject Area微电子学
Application Date2012-12-17
Application NumberCN201210550029.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25198
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
谢海忠,卢鹏志,耿雪妮,等. 氮化镓基衬底光子晶体发光二极管制作方法.
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