SEMI OpenIR  > 中科院半导体照明研发中心
氮化镓基3D垂直结构发光二极管的结构
谢海忠; 张扬; 杨华; 李璟; 刘志强; 伊晓燕; 王军喜; 王国宏; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-03-13 ; 2013-03-13
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-11-30
Application NumberCN201210506365.2
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25194
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
谢海忠,张扬,杨华,等. 氮化镓基3D垂直结构发光二极管的结构.
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