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Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth
Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang
2013-10
Source PublicationApplied Physics Letters
Volume103Issue:15Pages:152109
Subject Area微电子学
Date Available2014-06-03
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25084
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth[J]. Applied Physics Letters,2013,103(15):152109.
APA Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang.(2013).Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth.Applied Physics Letters,103(15),152109.
MLA Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang."Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth".Applied Physics Letters 103.15(2013):152109.
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